Rojas, J.P.*, Ghoneim, M.T.*, Young, C.D. and Hussain, M.M., 2013. Flexible High-$\kappa $/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric. IEEE Transactions on Electron Devices, 60(10), pp.3305-3309. [Equally Contributed]
Rojas, J.P.*, Ghoneim, M.T.*, Young, C.D. and Hussain, M.M., 2013. Flexible High-$\kappa $/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric. IEEE Transactions on Electron Devices, 60(10), pp.3305-3309. [Equally Contributed]
Abstract:
Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 cm2 and thickness: 25 μm) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections.