Ghoneim, Mohamed T., Casey E. Smith, and Muhammad M. Hussain. "Simplistic graphene transfer process and its impact on contact resistance." Applied Physics Letters 102.18 (2013): 183115.
Ghoneim, Mohamed T., Casey E. Smith, and Muhammad M. Hussain. "Simplistic graphene transfer process and its impact on contact resistance." Applied Physics Letters 102.18 (2013): 183115.
Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized grapheneto host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene'smost prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.