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Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors

June 3, 2015

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Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors Wei Liu, Deblina Sarkar, Jiahao Kang, Wei Cao, and Kaustav Banerjee ACS Nano 2015 9 (8), 7904-7912 DOI: 10.1021/nn506512j

Abstract

 Metal contacts to atomically thin two-dimensional (2D) crystal based FETs play a decisive role in determining their operation and performance. However, the effects of contacts on the switching behavior, field-effect mobility, and current saturation of monolayer MoS2 FETs have not been well explored and, hence, is the focus of this work. The dependence of contact resistance on the drain current is revealed by four-terminal-measurements. Without high-κ dielectric boosting, an electron mobility of 44 cm2/(V·s) has been achieved in a monolayer MoS2 FET on SiO2 substrate at room temperature. Velocity saturation is identified as the main mechanism responsible for the current saturation in back-gated monolayer MoS2 FETs at relatively higher carrier densities. Furthermore, for the first time, electron saturation velocity of monolayer MoS2 is extracted at high-field condition.

via ACS Nano
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